Analysis and Design Considerations of Low-voltage Trench MOSFET for Inductive Load Switching Applications

被引：0

作者：

Spetik, Radim ^{[1
]}

Fujiwara, Shuji ^{[2
]}

Ho, Ihsiu ^{[5
]}

Hao, Jifa ^{[3
]}

Arora, Aakash ^{[4
]}

Blaho, Matej ^{[1
]}

Seliga, Ladislav ^{[1
]}

Malousek, Roman ^{[1
]}

Kudrna, Filip ^{[1
]}

Menon, Santosh ^{[3
]}

Greenwood, B. ^{[3
]}

Thomason, M. ^{[5
]}

Williams, B. ^{[5
]}

机构：

[1] ON Semicond, R&D, Roznov Pr, Czech Republic

[2] ON Semicond, Gunma, Japan

[3] ON Semicond, Gresham, OR USA

[4] ON Semicond, Providence, RI USA

[5] ON Semicond, Pocatello, ID USA

来源：

PROCEEDINGS OF THE 2020 32ND INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD 2020) | 2020年

关键词：

Trench MOSFET; inductive switching clamped / unclamped; thermal runaway;

D O I：

10.1109/ispsd46842.2020.9170095

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

the paper summarizes both analytical and numerical considerations as well as experimental data of low voltage (50 V) trench MOSFET in unclamped (UIS) and self-clamped (SCIS) inductive switching applications. The herein presented data summarize failure mechanisms that ultimately limit UIS / SCIS rating of a device once all other design factors are exploited.

引用

页码：557 / 560

页数：4

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