Liquid phase epitaxy photoluminescence and photoelectrical properties of variband (Ge2)1-x(ZnSe)x layers

Liquid phase epitaxy (LPE) of (Ge-2)(1-x)(ZnSe)(x) variband layers was performed. As a fusiable solvent metal Sn was used. The solubility of ZnSe in Sn and Sn + (0-3 at %) Ge at 600-900 degrees C was determined. Single crystal(111) and(100) Ge and GaAs wafers were used as substrates. Dependence of the thickness of(Ge-2)(1-x)(ZnSe)(x) epilayers on the amount of liquid phase and the position of the substrates is studied. Distribution of the Ce, Zn and Se along the thickness of the epitaxial layers is determined. The photoluminescence spectra from the surface of (Ge-2)(1-x)(ZnSe)(x) layers ate used to estimate the bandgap of the solid solutions. The spectral dependences of open-circuit voltage V-oc of n-GaAs-n-(Ge-2)(1-x)(ZnSe)(x)-p-(Ge-2)(1-x) (ZnSe)(x) structures are presented.