Radiation damage buildup and dislocation evolution in Ni and equiatomic multicomponent Ni-based alloys

被引:77
|
作者
Levo, E. [1 ]
Granberg, F. [1 ]
Fridlund, C. [1 ]
Nordlund, K. [1 ]
Djurabekova, F. [1 ,2 ]
机构
[1] Univ Helsinki, Dept Phys, POB 43, FIN-00014 Helsinki, Finland
[2] Univ Helsinki, Helsinki Inst Phys, POB 43, FIN-00014 Helsinki, Finland
基金
芬兰科学院;
关键词
Radiation; Damage; Equiatomic; Multicomponent; Alloy; HIGH-ENTROPY ALLOYS; COLLISION CASCADES; DISPLACEMENT;
D O I
10.1016/j.jnucmat.2017.04.023
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Single-phase multicomponent alloys of equal atomic concentrations ("equiatomic") have proven to exhibit promising mechanical and corrosion resistance properties, that are sought after in materials intended for use in hazardous environments like next-generation nuclear reactors. In this article, we investigate the damage production and dislocation mobility by simulating irradiation of elemental Ni and the alloys NiCo, NiCoCr, NiCoFe and NiFe, to assess the effect of elemental composition. We compare the defect production and the evolution of dislocation networks in the simulation cells of two different sizes, for all five studied materials. We find that the trends in defect evolution are in good agreement between the different cell sizes. The damage is generally reduced with increased alloy complexity, and the dislocation evolution is specific to each material, depending on its complexity. We show that increasing complexity of the alloys does not always lead to decreased susceptibility to damage accumulation under irradiation. We show that, for instance, the NiCo alloy behaves very similarly to Ni, while presence of Fe or Cr in the alloy even as a third component reduces the saturated level of damage substantially. Moreover, we linked the defect evolution with the dislocation transformations in the alloys. Sudden drops in defect number and large defect fluctuations from the continuous irradiation can be explained from the dislocation activity. (C) 2017 Elsevier B.V. All rights reserved.
引用
收藏
页码:323 / 332
页数:10
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