Effect of spin-orbit interaction in an InGaAs-based Aharonov-Bohm ring structure

被引:4
|
作者
Nitta, J [1 ]
Koga, T [1 ]
Meijer, FE [1 ]
机构
[1] NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan
来源
关键词
Aharonov-Bohm structure; spin-orbit interaction; spin-interference;
D O I
10.1016/S1386-9477(02)01052-4
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The interference effect in a gate controlled mesoscopic Aharonov-Bohm ring structure is studied in the presence of spin-orbit interaction. After ensemble averaging, the Fourier spectrum of h/2e oscillations as a function of gate voltage showed an oscillatory behavior. The oscillatory behavior is possibly due to the Aharonov-Casher type interference. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:143 / 144
页数:2
相关论文
共 50 条