F2-laser ablation and micro-patterning of GaPO4

被引：12

作者：

Peruzzi, M ^{[1
]}

Pedarnig, JD ^{[1
]}

Sturm, H ^{[1
]}

Huber, N ^{[1
]}

Bäuerle, D ^{[1
]}

机构：

[1] Johannes Kepler Univ Linz, Angew Phys, A-4040 Linz, Austria

来源：

EUROPHYSICS LETTERS | 2004年 / 65卷 / 05期

关键词：

D O I：

10.1209/epl/i2003-10159-2

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Pulsed-laser ablation and micro-patterning of gallium orthophosphate (GaPO4) single crystals and ceramics by 157 nm F-2-laser radiation is reported. Micron-sized holes with sharp edges and smooth walls are obtained by employing projection-mask techniques. The threshold fluence of ablation is around Phi(th) approximate to 180 mJ/cm(2) and ablation rates of W-A less than or equal to 90 nm/pulse are achieved at fluence levels of Phi less than or equal to 2 J/cm(2) for both material types.

引用

页码：652 / 657

页数：6

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