Defect characterization of homo-epitaxially grown 6H-SiC on (0001)silicon and (0001)carbon faces

被引：1
|
作者：
Stoemenos, J [1 ]
Di Cioccio, L
Papaioannou, V
David, D
Pudda, C
机构：
[1] Aristotelian Univ Salonika, Dept Phys, GR-54006 Salonika, Greece
[2] CEA Technol Avancees, LETI, DMITEC, CENG, F-38054 Grenoble 9, France
来源：
SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2 | 1998年 / 264-2卷
关键词：
microtwins; 6H to 3C SiC transformation;
D O I：
10.4028/www.scientific.net/MSF.264-268.409
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The extended defects like triangular terraces and hexagonal pyramids which are formed on the (0001) Si and (000 (1) over bar) carbon sides, during the homo-epitaxial growth of 6H-SiC, were studied by Atomic Force Microscopy (AFM) and selected cross-section transmission electron microscopy (XTEM), Very often the formation of these extended defects is related with a 6H to 3C transformation. Off-axis (3.5 degrees towards <11 (2) over bar 0>) SiC wafers were used in order to investigate the substrate polarity effect. The defects are strongly related with the bunching of steps. As the length and the height of the microsteps increases the density of these extended defects also increases.
引用
收藏
页码：409 / 412
页数：4
相关论文
共 50 条
  • [1] THE DIFFERENCE BETWEEN 6H-SIC (0001) AND (0001) FACES OBSERVED BY AES, LEED AND ESCA
    NAKANISHI, S
    TOKUTAKA, H
    NISHIMORI, K
    KISHIDA, S
    ISHIHARA, N
    [J]. APPLIED SURFACE SCIENCE, 1989, 41-2 : 44 - 48
  • [2] Hydrogen intercalation of graphene grown on 6H-SiC(0001)
    Watcharinyanon, S.
    Virojanadara, C.
    Osiecki, J. R.
    Zakharov, A. A.
    Yakimova, R.
    Uhrberg, R. I. G.
    Johansson, L. I.
    [J]. SURFACE SCIENCE, 2011, 605 (17-18) : 1662 - 1668
  • [3] Morphology of sublimation grown 6H-SiC(0001) surfaces
    Schulz, D
    Dolle, J
    Rost, HJ
    Siche, D
    Wollweber, J
    [J]. SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000, 2001, 353-356 : 243 - 246
  • [4] Atomic structures of 6H-SiC(0001) and (0001) surfaces
    Li, L
    Tsong, IST
    [J]. SURFACE SCIENCE, 1996, 351 (1-3) : 141 - 148
  • [5] Oxidation of 6H-SiC(0001)
    Simon, L
    Kubler, L
    Ermolieff, A
    Billon, T
    [J]. MICROELECTRONIC ENGINEERING, 1999, 48 (1-4) : 261 - 264
  • [6] A TEM study of GaN grown by ELO on (0001) 6H-SiC
    Ruterana, P
    Beaumont, B
    Gibart, P
    Melnik, Y
    [J]. MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 2000, 5 : art. no. - W2.5
  • [7] Effects of Al on epitaxial graphene grown on 6H-SiC (0001)
    Xia, C.
    Johansson, L. I.
    Zakharov, A. A.
    Hultman, L.
    Virojanadara, C.
    [J]. MATERIALS RESEARCH EXPRESS, 2014, 1 (01):
  • [8] Atomic-layer-resolved bandgap structure of an ultrathin oxynitride-silicon film epitaxially grown on 6H-SiC(0001)
    Shirasawa, T.
    Hayashi, K.
    Yoshida, H.
    Mizuno, S.
    Tanaka, S.
    Muro, T.
    Tamenori, Y.
    Harada, Y.
    Tokushima, T.
    Horikawa, Y.
    Kobayashi, E.
    Kinoshita, T.
    Shin, S.
    Takahashi, T.
    Ando, Y.
    Akagi, K.
    Tsuneyuki, S.
    Tochihara, H.
    [J]. PHYSICAL REVIEW B, 2009, 79 (24)
  • [9] Relaxation of 6H-SiC(0001) Surface and Si Adsorption on 6H-SiC(0001):an ab initio Study
    贺小敏
    陈治明
    李连碧
    [J]. Chinese Physics Letters., 2015, 32 (03) - 104
  • [10] Relaxation of 6H-SiC (0001) Surface and Si Adsorption on 6H-SiC (0001): an ab initio Study
    He Xiao-Min
    Chen Zhi-Ming
    Li Lian-Bi
    [J]. CHINESE PHYSICS LETTERS, 2015, 32 (03)
12345