Effect of Stacking Layers on the Structure and Properties of Ca(Mg1/3Nb2/3)O3/CaTiO3 Thin Films

被引：0
|
作者：
Zhou, Jing [1 ]
Zhu, Jie [1 ]
Chen, Wen [1 ]
Shen, Jie [1 ]
Lei, Qiong [1 ]
He, Huimin [1 ]
机构：
[1] Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan, Peoples R China
来源：
ASIAN CERAMIC SCIENCE FOR ELECTRONICS III AND ELECTROCERAMICS IN JAPAN XII | 2010年 / 421-422卷
关键词：
Arrangement pattern; heterogeneous thin films; Ca(Mg1/3Nb2/3)O-3/CaTiO3; MICROWAVE DIELECTRIC-PROPERTIES;
D O I：
10.4028/www.scientific.net/KEM421-422.115
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Effect of stacking layers on the structure and properties of Ca(Mg1/3Nb2/3)O-3/CaTiO3 (CMN/CT) microwave dielectric heterogeneous thin films prepared was investigated. Precursor solutions for CMN and CT synthesis were obtained by Pechini method. The arrangement pattern has affected structure and properties of heterogeneous thin film. The CMN-CT arrangement heterostructure thin film has second phase from the CMN films layer. The CT-CMN heterostructure film which has a smooth and dense microstructure was composed of pure perovskite phase without any second phase, this result was attributed to the CT film layer which is a buffer layer between substrate and CMN film layer. At 1MHz frequency, CT-CMN exhibits the dielectric properties of epsilon(r)=47.5, tan delta=0.020.
引用
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页码：115 / +
页数：2
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