Ultrasharp diamond-coated silicon tips for scanning-probe devices

被引：8
|
作者：
Givargizov, EI [1 ]
Stepanova, AN
Mashkova, ES
Molchanov, VA
Shi, F
Hudek, P
Rangelow, IW
机构：
[1] Russian Acad Sci, Inst Crystallog, Moscow 117333, Russia
[2] Moscow MV Lomonosov State Univ, Inst Nucl Phys, Moscow 119899, Russia
[3] Univ Kassel, Inst Tech Phys, D-34132 Kassel, Germany
来源：
MICROELECTRONIC ENGINEERING | 1998年 / 42卷
关键词：
D O I：
10.1016/S0167-9317(98)00116-6
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The goal of the work was to develop a technique for preparing cantilevers for atomic force microscopy with ultra-sharp, ultra-hard tips. For this purpose, two technologies were combined: (a) preparation of Si cantilevers with the principal (111)-oriented face; (b) formation of the probe by growing of single-crystal Si columns on the cantilevers from the vapor phase (vapor-liquid-solid VLS) with subsequent sharpening, deposition of diamond on the tips formed, and sharpening of the diamond tips by ion-beam bombardment. Sharp diamond tips with curvature radii as small as 20 nm were formed.
引用
收藏
页码：499 / 502
页数：4
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