Direct Etched Cu characterization for Advanced Interconnects

被引：0

作者：

Wen, Lianggong ^{[1
]}

Yamashita, Fumiko ^{[2
]}

Tang, Baojun ^{[1
]}

Croes, Kristof ^{[1
]}

Tahara, Shigeru ^{[2
]}

Shimoda, Keiichi ^{[2
]}

Maeshiro, Takeru ^{[2
]}

Nishimura, Eiichi ^{[2
]}

Lazzarino, Frederic ^{[1
]}

Ciofi, Ivan ^{[1
]}

Bommels, Jurgen ^{[1
]}

Tokei, Zsolt ^{[1
]}

机构：

[1] IMEC, Kapeldreef 75, B-3001 Leuven, Belgium

[2] Tokyo Electron Ltd, Minato Ku, Tokyo 1076325, Japan

来源：

2015 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE AND 2015 IEEE MATERIALS FOR ADVANCED METALLIZATION CONFERENCE (IITC/MAM) | 2015年

关键词：

INTERFACE;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Cu wires patterning by direct etch methods is investigated at 300mm wafer level. Cross-sectional sidewall profiles with tapering angles around 74.5 degrees are obtained with a mid-line width of 44 nm, which paves the way to further scaling of this technique. Lower resistivity is demonstrated with respect to conventional Cu damascene process, with low leakage current between adjacent Cu lines. An in-situ lOnm SiN cap is deposited as a passivation to enable electrical and reliability tests. The electromigration (EM) characterization shows promising reliability performance of the direct etched Cu wires.

引用

页码：173 / 175

页数：3

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