Optimization of Textured Silicon Solar Cells

被引:0
|
作者
Sachenko, Anatoliy [1 ]
Kostylyov, Vitaliy [1 ]
Vlasiuk, Viktor [1 ]
Sokolovskyi, Igor [1 ]
Evstigneev, Mykhaylo [2 ]
机构
[1] Natl Acad Sci Ukraine, V Lashkaryov Inst Semicond Phys, Kiev, Ukraine
[2] Mem Univ Newfoundland, Dept Phys & Phys Oceanog, St John, NF A1B 3X7, Canada
关键词
solar cells; external quantum efficiency; textured; silicon; DEEP IMPURITY LEVELS; NONRADIATIVE RECOMBINATION; EFFICIENCY; TEMPERATURE;
D O I
10.1109/pvsc45281.2020.9300877
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
An approach is developed to model high-efficiency textured silicon solar cells. It uses a simple empirical formula to quantitatively describe the experimental external quantum efficiency in the long-wavelength part of the spectrum and hence to find the short-circuit current density as a function of base thickness. In addition to the usual recombination mechanisms in silicon, this approach takes into account the non-radiative trap-assisted exciton Auger recombination and recombination in the space-charge region. This approach allows to establish the photoconversion efficiency for arbitrary base thickness and doping level, and hence to optimize the cell performance with respect to these parameters.
引用
收藏
页码:719 / 723
页数:5
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