Oxygen depth profiling with subnanometre depth resolution

被引：3

作者：

Kosmata, Marcel ^{[1
]}

Munnik, Frans ^{[1
]}

Hanf, Daniel ^{[1
]}

Groetzschel, Rainer ^{[1
]}

Crocoll, Sonja ^{[2
]}

Moeller, Wolfhard ^{[1
]}

机构：

[1] Helmholtz Zentrum Dresden Rossendorf, D-01314 Dresden, Germany

[2] X FAB Dresden GmbH & Co KG, D-01109 Dresden, Germany

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2014年 / 337卷

关键词：

Ion beam analysis; High resolution depth profiling; ERD; High-k materials; ELASTIC RECOIL DETECTION; ANGLE MULTIPLE-SCATTERING; SCREENED COULOMB REGION; ION-BEAM ANALYSIS; MAGNETIC SPECTROGRAPH; CHARGE-STATE; SILICON; ERDA; RBS; SPECTROMETER;

D O I：

10.1016/j.nimb.2014.07.018

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A High-depth Resolution Elastic Recoil Detection (HR-ERD) set-up using a magnetic spectrometer has been taken into operation at the Helmholtz-Zentrum Dresden-Rossendorf for the first time. This instrument allows the investigation of light elements in ultra-thin layers and their interfaces with a depth resolution of less than 1 nm near the surface. As the depth resolution is highly influenced by the experimental measurement parameters, sophisticated optimisation procedures have been implemented. Effects of surface roughness and sample damage caused by high fluences need to be quantified for each kind of material. Also corrections are essential for non-equilibrium charge state distributions that exist very close to the surface. Using the example of a high-k multilayer SiO2/Si3N4Ox/SiO2/Si it is demonstrated that oxygen in ultra-thin films of a few nanometres thickness can be investigated by HR-ERD. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：27 / 33

页数：7

共 50 条

[1] SIMULTANEOUS HIGH DEPTH RESOLUTION PROFILING OF CARBON AND OXYGEN
GOSSETT, CR
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 218 (1-3): : 149 - 153
[2] THE DEPTH DEPENDENCE OF THE DEPTH RESOLUTION IN SPUTTER PROFILING
WERNER, HW
[J]. SURFACE AND INTERFACE ANALYSIS, 1982, 4 (01) : 1 - 7
[3] IMPROVED DEPTH RESOLUTION OF AES IN-DEPTH PROFILING
BARNA, A
SULYOK, A
MENYHARD, M
[J]. SURFACE AND INTERFACE ANALYSIS, 1992, 19 (1-12) : 77 - 79
[4] DETERMINATION OF THE DEPTH RESOLUTION IN AUGER DEPTH PROFILING MEASUREMENTS
ROLL, K
HAMMER, C
[J]. THIN SOLID FILMS, 1979, 57 (02) : 209 - 212
[5] DEPTH RESOLUTION IN SPUTTER PROFILING
HOFMANN, S
[J]. APPLIED PHYSICS, 1977, 13 (02): : 205 - 207
[6] DEPTH RESOLUTION OF SPUTTER PROFILING
ANDERSEN, HH
[J]. APPLIED PHYSICS, 1979, 18 (02): : 131 - 140
[7] THE DEPTH RESOLUTION OF SPUTTER PROFILING
KING, BV
TSONG, IST
[J]. ULTRAMICROSCOPY, 1984, 14 (1-2) : 75 - 78
[8] INFLUENCE OF ION MIXING ON THE DEPTH RESOLUTION OF SPUTTER DEPTH PROFILING
CHENG, YT
DOW, AA
CLEMENS, BM
CIRLIN, EH
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (03): : 1641 - 1645
[9] CRYSTALLINE EFFECTS IN-DEPTH RESOLUTION IN AES DEPTH PROFILING
KAJIWARA, K
[J]. SURFACE AND INTERFACE ANALYSIS, 1994, 22 (1-12) : 22 - 26
[10] EFFECT OF ION MIXING ON THE DEPTH RESOLUTION OF SPUTTER DEPTH PROFILING
CHENG, YT
DOW, AA
CLEMENS, BM
[J]. APPLIED PHYSICS LETTERS, 1988, 53 (14) : 1346 - 1348

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