Silicon-on-insulator based electro-optic variable optical attenuator with a series structure

被引：0
|
作者：
He, YJ [1 ]
Li, F [1 ]
Liu, YL [1 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, Res & Dev Ctr Optoelect, Beijing 100083, Peoples R China
来源：
CHINESE PHYSICS LETTERS | 2005年 / 22卷 / 01期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
An electro-optic variable optical attenuator in silicon-on-insulator is designed and fabricated. A series Structure is used to improve the device efficiency Compared to the attenuator in the single p-i-n diode Structure in the same modulating length, the attenuation range of the device in the series structure improves 2-3 times in the same injecting current density, while the insertion loss is not affected. The maximum dynamic attenuation of the device is greater than 30 dB. The response frequency is obtained to be about 2 MHz.
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页码：95 / 98
页数：4
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