Electrical activation process of C implanted semi-insulating GaAs

被引：0
|
作者：
Kuriyama, K [1 ]
Kato, T [1 ]
Tomizawa, K [1 ]
Takahashi, Y [1 ]
Aoki, Y [1 ]
Takeshita, H [1 ]
Yamamoto, S [1 ]
Naramoto, H [1 ]
机构：
[1] HOSEI UNIV,COLL ENGN,KOGANEI,TOKYO 184,JAPAN
来源：
ION BEAM MODIFICATION OF MATERIALS | 1996年
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：878 / 881
页数：4
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