Mobility spectrum analysis of HgCdTe epitaxial layers grown by Metalorganic Chemical Vapour Deposition

被引：0
|
作者：
Wrobel, Jaroslaw [1 ]
Gorczyca, Kinga [1 ]
Umana-Membreno, Gilberto A. [2 ]
Keblowski, Artur [3 ]
Boguski, Jacek [1 ]
Martyniuk, Piotr [1 ]
Madejczyk, Pawel [1 ]
机构：
[1] Mil Univ Technol, Inst Appl Phys, 2 Kaliskiego Str, PL-00908 Warsaw, Poland
[2] Univ Western Australia, Sch Elect Elect & Comp Engn, 35 Stirling Highway, Crawley, WA 6009, Australia
[3] VIGO Syst SA, 129-134 Poznanska Str, PL-05850 Ozarow Mazowiecki, Poland
来源：
12TH CONFERENCE ON INTEGRATED OPTICS: SENSORS, SENSING STRUCTURES, AND METHODS | 2017年 / 10455卷
基金：
澳大利亚研究理事会;
关键词：
HgCdTe; MCT; QMSA; mobility; Hall measurements; MOCVD; doping; infrared detectors;
D O I：
10.1117/12.2282836
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The preliminary results of quantitative mobility spectrum analysis of highly iodine-doped Hg0,685Cd0,315Te and arsenicdoped Hg0,827Cd0,173Te for the 5 - 300 K temperature range have been presented. Electron mobilities for the samples made by metalorganic chemical vapor deposition technique have been compared with the available literature data.
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页数：7
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