Evaluation technology for time-dependent organic contamination on silicon wafer surfaces

被引:0
|
作者
Habuka, H [1 ]
Ishiwari, S [1 ]
Kato, H [1 ]
机构
[1] Yokohama Natl Univ, Dept Chem Engn Sci, Yokohama, Kanagawa 2408501, Japan
来源
SEMICONDUCTOR SILICON 2002, VOLS 1 AND 2 | 2002年 / 2002卷 / 02期
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The time-dependent organic contamination on silicon wafer surfaces is evaluated using the new technologies, the model of multicomponent organic species adsorption-induced contamination (MOSAIC) and the silicon plate method. The silicon plate method showed that the concentration of bis(2-ethylhexyl)phthalate (DOP) on the silicon wafer surface reached a steady state which had a relationship with its concentration in the clean room air. This is consistent with the results theoretically predicted using the MOSAIC model. Therefore, this technology is concluded to be effective for evaluating the time-dependent behavior of organic contamination on the silicon wafer surface.
引用
收藏
页码:863 / 874
页数:12
相关论文
共 50 条
  • [1] Time-dependent airborne organic contamination on silicon wafer surface stored in a plastic box
    Habuka, H
    Shimazaki, Y
    Okamura, S
    Sugimoto, F
    Takeuchi, T
    Aihara, M
    Shimada, M
    Okuyama, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (4A): : 1575 - 1580
  • [2] Development of evaluation method for organic contamination on silicon wafer surfaces
    Ishiwari, S
    Kato, H
    Habuka, H
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2001, 148 (11) : G644 - G648
  • [3] Organic contamination on silicon wafer surfaces in processing environments
    Tanishima, M
    Abe, N
    CLEANING TECHNOLOGY IN SEMICONDUCTOR DEVICE MANUFACTURING V, 1998, 35 : 513 - 520
  • [4] Analysis of time-dependent haze on silicon surfaces
    Münter, N
    Kolbesen, BO
    Storm, W
    Müller, T
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2003, 150 (03) : G192 - G197
  • [5] Airborne organic contamination behavior on silicon wafer surface
    Habuka, H
    Ishiwari, S
    Kato, H
    Shimada, M
    Okuyama, K
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2003, 150 (02) : G148 - G154
  • [6] Study on the determination of contamination by Cu particles on silicon wafer surfaces
    Jun, PK
    Lim, HB
    JOURNAL OF ANALYTICAL ATOMIC SPECTROMETRY, 2003, 18 (02) : 111 - 114
  • [7] Organic contamination on wafer surfaces:: Measurement techniques and deposition kinetics
    Bügler, J
    Zielonka, G
    Pfitzner, L
    Ryssel, H
    Schottler, M
    CRYSTALLINE DEFECTS AND CONTAMINATION: THEIR IMPACT AND CONTROL IN DEVICE MANUFACTURING III - DECON 2001, 2001, 2001 (29): : 294 - 307
  • [8] Evaluation of the Time-dependent Contamination of Spinal Implants Prospective Randomized Trial
    Menekse, Guner
    Kuscu, Ferit
    Suntur, Bedia Mutay
    Gezercan, Yurdal
    Ates, Tuncay
    Ozsoy, Kerem Mazhar
    Okten, Ali Ihsan
    SPINE, 2015, 40 (16) : 1247 - 1251
  • [9] Simultaneous analysis of light and heavy organic contamination on silicon wafer
    Ritala, H
    Eränen, S
    Kiviranta, A
    Räsänen, J
    Tarkiainen, V
    Kiuru, J
    Ketola, RA
    ULTRA CLEAN PROCESSING OF SILICON SURFACES VII, 2005, 103-104 : 209 - 212
  • [10] Time-dependent electron phenomena at surfaces
    Diez Muino, R.
    Sanchez-Portal, D.
    Silkin, V. M.
    Chulkov, E. V.
    Echenique, P. M.
    PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 2011, 108 (03) : 971 - 976