Study of Drift in RRAM Devices Under Various Operating Conditions

被引：1

作者：

Hochman, Brett ^{[1
]}

Jha, Rashmi ^{[1
]}

Leedy, Kevin ^{[2
]}

机构：

[1] Univ Cincinnati, Elect Engn & Comp Sci, Cincinnati, OH 45221 USA

[2] Air Force Res Lab, Dayton, OH USA

来源：

PROCEEDINGS OF THE 2021 IEEE NATIONAL AEROSPACE AND ELECTRONICS CONFERENCE (NAECON) | 2021年

关键词：

RRAM; Stability; Drift; Data Retention; Read Hammer;

D O I：

10.1109/NAECON49338.2021.9696425

中图分类号：

V [航空、航天];

学科分类号：

08 ; 0825 ;

摘要：

This paper reports the observations of drift in resistive states of HfO2-based Resistive Random Access Memory devices under continuous and read hammer operations. We provide possible explanations and analysis of the drift from the original state for both high and low resistance states. This work will provide a solid foundation for understanding the device performance over relatively long periods of time and under various operating conditions.

引用

页码：405 / 410

页数：6

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