TEM Characterization of Polysilicon and Silicide Fin Fabrication Processes of FinFETs

被引：0
|
作者：
Ratajczak, J. [1 ]
Laszcz, A. [1 ]
Czerwinski, A. [1 ]
Katcki, J. [1 ]
Tang, X. [2 ]
Reckinger, N. [2 ]
Yarekha, D. A. [3 ]
Larrieu, G. [3 ]
Dubois, E. [3 ]
机构：
[1] Inst Technol Elektronowej, PL-02668 Warsaw, Poland
[2] Catholic Univ Louvain, Microelect Lab, B-1348 Louvain, Belgium
[3] CNRS, ISEN, IEMN, UMR 8520, F-59652 Villeneuve Dascq, France
来源：
ACTA PHYSICA POLONICA A | 2009年 / 116卷
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The transmission electron microscopy characterization of various silicon and silicide fin structures intended for application in FinFET devices has been performed. The results showed that transmission electron microscopy is a very useful tool for optimization of manufacturing processes of fin nanostructures in FinFETs.
引用
收藏
页码：S89 / S91
页数：3
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