Acceptor 1s-2p± transitions in GaAs/Ga0.7Al0.3As quantum wells:: Effects of spatially dependent screening under electric and magnetic fields

被引：0
|
作者：
Akbas, H [1 ]
Aktas, S
Okan, SE
Ulas, M
Tomak, M
机构：
[1] Trakya Univ, Dept Phys, TR-22030 Edirne, Turkey
[2] Middle E Tech Univ, Dept Phys, TR-06531 Ankara, Turkey
来源：
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1998年 / 205卷 / 02期
关键词：
D O I：
10.1002/(SICI)1521-3951(199802)205:2<537::AID-PSSB537>3.0.CO;2-I
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The valence subband energies in the presence of an electric-field are calculated using the fourth-order Runge-Kutta method. The 1s- and 2p(+/-)-like acceptor states in the presence of a magnetic field are then calculated variationally. The effects of the spatially dependent screening function epsilon(r) on the calculation of the transition energies are specifically investigated. The use of a constant epsilon(o) is shown to yield better agreement with experimental results.
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页码：537 / 542
页数：6
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