A scaling theory for fully-depleted, surrounding-gate MOSFET's: including effective conducting path effect

被引:18
|
作者
Chiang, TK [1 ]
机构
[1] So Taiwan Univ Technol, Dept Elect Engn, Tainan 712, Taiwan
关键词
SG MOSFET's; effective conducting path effect; scaling factor; subthreshold swing; natural length;
D O I
10.1016/j.mee.2004.10.005
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A scaling theory for fully-depleted surrounding-gate (SG) MOSFET's is derived, which gives a basic idea how the effective conducting path affects the scaling theory. By investigating the subthreshold conducting phenomenon of SG MOSFET's, the effective conducting path effect (ECPE) is employed to obtain the natural length lambda(4) which is relevant to the scaling equation. With various substrate concentrations, the minimum channel potential Phi(deff,min) induced by effective conducting path shows the novel scaling factor alpha(4). Compared to conventional scaling rule, our model accounts for doping effect and hence provides a unified scaling rule for fully-depleted SG SOI MOSFET's. (C) 2004 Elsevier B.V. All rights reserved.
引用
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页码:175 / 183
页数:9
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