A new set-up of Mossbauer Spectroscopic Microscope to study the correlation between Fe impurities and lattice defects in Si crystals

被引：0

作者：

Ino, Yuji ^{[1
]}

Watanabe, Tomio ^{[1
]}

Hayakawa, Kazuo ^{[1
]}

Yukihira, Kenichi ^{[1
]}

Matsumuro, Kazuaki ^{[1
]}

Fujita, Hirotaka ^{[1
]}

Ogai, Keiko ^{[2
]}

Moriguchi, Koichi ^{[2
]}

Harada, Yoshihito ^{[2
]}

Soejima, Hiroyoshi ^{[1
]}

Yoshida, Yutaka ^{[1
]}

机构：

[1] Shizuoka Inst Sci & Technol, Toyosawa 2200-2, Fukuroi, Shizuoka 4378555, Japan

[2] APCO Ltd, Kitano Cho 522-10, Hachioji, Tokyo 1920906, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2017年 / 468卷

基金：

日本科学技术振兴机构;

关键词：

Characterization; Defects; Impurities; Mossbauer spectroscopy; Semiconducting silicon; MULTICRYSTALLINE SILICON; IRON;

D O I：

10.1016/j.jcrysgro.2016.12.109

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A new set-up of "Mossbauer Spectroscopic Microscope (MSM)" is applied to study not only the diffusion of Fe in a single-crystalline Si, but also a correlation between Fe impurities and the lattice defects in a multi-crystalline (mc-) Si. In addition to substitutional Fe-s(0) and interstitial Fe-i(0) components, the Mossbauer spectrum of mc-Si contains a new component assigned to "Fei-defect associations". All three components appear to distribute inhomogeneously, and to correlate with the defect distributions. These results are clearly different from that of the single crystalline Si wafer.

引用

页码：489 / 492

页数：4

共 7 条

[1] Mossbauer spectroscopic microscope study on diffusion and segregation of Fe impurities in mc-Si wafer
Yoshida, Yutaka
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Usami, Noritaka
[J]. HYPERFINE INTERACTIONS, 2019, 240 (01):
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[3] Mössbauer spectroscopic microscope study on diffusion and segregation of Fe impurities in mc-Si wafer
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