Room temperature interband cascade lasers

被引：14
|
作者：
Kim, M. [1 ]
Canedy, C. L. [1 ]
Kim, C. S. [1 ]
Bewley, W. W. [1 ]
Lindle, J. R. [1 ]
Abell, J. [1 ]
Vurgaftman, I. [1 ]
Meyer, J. R. [1 ]
机构：
[1] USN, Res Lab, Washington, DC 20375 USA
来源：
PROCEEDINGS OF THE 14TH INTERNATIONAL CONFERENCE ON NARROW GAP SEMICONDUCTORS AND SYSTEMS | 2010年 / 3卷 / 02期
关键词：
semiconductor lasers; mid-infrared lasers; interband cascade lasers; AUGER RECOMBINATION; NARROW-RIDGE; HIGH-POWER;
D O I：
10.1016/j.phpro.2010.01.162
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An analysis of the threshold current densities and differential slope efficiencies in interband cascade lasers with type-II active regions revealed lower Auger recombination rates than anticipated theoretically or using the data from prior experiments. Furthermore, a new design of the waveguide yielded room-temperature internal losses as low as approximate to 6 cm(-1). The combination of these advances with improvements to the processing of narrow ridges has led operation up to 335 K in continuous-wave mode for devices emitting at 3.3-3.7 mu m. An 8.7-mu m-wide ridge without facet coatings produced up to 23 mW of cw power at 300 K, and displayed a maximum wall-plug efficiency of 2.0%.
引用
收藏
页码：1195 / 1200
页数：6
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