Preparation and characterization of ZnTe thin films by SILAR method

被引：37
|
作者：
Kale, S. S.
Mane, R. S.
Pathan, H. M.
Shaikh, A. V.
Joo, Oh-Shim
Han, Sung-Hwan [1 ]
机构：
[1] Hanyang Univ, Inorgan NanoMat Lab, Dept Chem, Seoul 133791, South Korea
[2] Korea Inst Sci & Technol, EcoNano Res Ctr, Seoul 130650, South Korea
[3] AKIs Poona Coll Arts Sci & Commerce, Pune, Maharashtra, India
来源：
APPLIED SURFACE SCIENCE | 2007年 / 253卷 / 09期
关键词：
ZnTe; thin films; solution chemistry; XRD; SEM; optical studies;
D O I：
10.1016/j.apsusc.2006.09.043
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Nanocrystalline zinc telluride (ZnTe) thin films were prepared by using successive ionic layer adsorption and reaction (SILAR) method from aqueous solutions of zinc sulfate and sodium telluride. The films were characterized by X-ray diffraction, scanning electron microscopy, energy dispersive X-ray analysis and optical absorption measurement techniques. The synthesized ZnTe thin films were nanocrystalline with densely aggregated particles in nanometer scale and were free from the voids or cracks. The optical band gap energy of the film was found to be thickness dependent. The elemental chemical compositional stoichiometric analysis revealed good Zn:Te elemental ratio of 53:47. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：4335 / 4337
页数：3
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