Effect of Zn doping on structural, morphological, optical and electrical properties of nebulized spray-deposited CdO thin films

被引:34
|
作者
Anitha, M. [1 ]
Anitha, N. [1 ]
Saravanakumar, K. [2 ]
Kulandaisamy, I. [3 ]
Amalraj, L. [1 ]
机构
[1] VHNSN Coll Autonomous, Res Dept Phys, Virudunagar 626001, Tamil Nadu, India
[2] VHNSN Coll Autonomous, Dept Chem, Virudunagar 626001, Tamil Nadu, India
[3] Arul Anandar Coll, PG & Res Dept Phys, Madurai 625514, Tamil Nadu, India
来源
关键词
PHYSICAL-PROPERTIES; SOL-GEL; ANNEALING TEMPERATURE; FABRICATION; GADOLINIUM;
D O I
10.1007/s00339-018-1993-7
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Transparent and conducting pure and Zn-doped CdO thin films (0, 1, 2, 3 and 4 at.% Zn) have been successfully deposited on glass substrates at optimized substrate temperature of 200 degrees C by spray pyrolysis technique using nebulizer. Structural, morphological, optical and electrical properties of pure and Zn-doped CdO thin films are studied in detail. X-ray diffraction study confirms that all the CdO thin films were polycrystalline in nature with major reflection alone (111) plane having a cubic structure. The high average grain size (345 nm-SEM) and low RMS (6.46 nm-AFM) values are obtained for 3 at.% Zn-doped CdO thin films. The optical band gap energy had increased from 2.49 to 2.57 eV as the function of doping concentration had increased from 1 to 3 at.% Zn and thereafter decreased for higher doping concentration. A strong green emission and slightly shifted for Zn-doping concentration of CdO thin films exhibited by photoluminescence spectra. The CdO bond vibration confirmed by FTIR and Raman analyzes. The resistivity value of un-doped CdO thin film is 1.06 x 10(-3) Omega cm and adding Zn-doped concentration, the resistivity consequently decreased to 6.2 x 10(-4) Omega cm for 3 at.% Zn-doped CdO thin films and then furthermore increased. A high-quality factor (7.07 x 10(-2)) was obtained for 3 at.% Zn-doped CdO thin films.
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页数:13
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