Manipulation of hole and band for thermoelectric enhancements in SrCd2Sb2 Zintl compound

被引:24
|
作者
Jin, Min [1 ]
Zheng, Liangtao [2 ]
Sun, Cheng [2 ]
Jiang, Long [3 ]
Meng, Xiang [4 ]
Chen, Qing [2 ]
Li, Wen [2 ]
机构
[1] Shanghai Dianji Univ, Coll Mat, 300 Shuihua Rd, Shanghai 201306, Peoples R China
[2] Tongji Univ, Sch Mat Sci & Engn, Interdisciplinary Mat Res Ctr, 4800 Caoan Rd, Shanghai 201804, Peoples R China
[3] CNPC Tubular Goods Res Inst, State Key Lab Performance & Struct Safety Petr Tu, Xian 710077, Shanxi, Peoples R China
[4] Chongqing Univ Arts & Sci, Res Inst New Mat Technol, Coinnovat Ctr Micro Nano Optoelect Mat & Devices, Chongqing 402160, Peoples R China
基金
中国国家自然科学基金;
关键词
Thermoelectric; SrCd2Sb(2); Carrier Concentration Optimization; Figure of Merit; Band Engineering; THERMAL-CONDUCTIVITY; PERFORMANCE; FIGURE; MERIT; PBTE; CONVERGENCE; PREDICTION; CAMG2BI2;
D O I
10.1016/j.cej.2021.130530
中图分类号
X [环境科学、安全科学];
学科分类号
08 ; 0830 ;
摘要
Exploration of novel thermoelectric materials is of great significance for thermoelectric development. AB2X2 Zintl compounds with rich chemical constitute, have been frequently demonstrated as promising thermoelectric materials because of their low lattice thermal conductivity and tunable band structure. This motivates the current work to focus on the experimental evaluation of thermoelectric potential on SrCd2Sb2, a new member of Zintl compounds. Na-substitution at Sr site leads to an effective increase in Hall carrier concentration from - 2.6 & times; 1018 to - 1.1 & times; 1020 cm-3, enabling a well estimation of transport properties by a single parabolic band (SPB) model with acoustic scattering. This reveals a multi-band transporting behavior in SrCd2Sb2 thermoelectrics with heavy-doping or elevated-temperature, ensuring a 150%-improvement in thermoelectric figure of merit (zT). On the basis of model, a peak zT of - 1.4 is achievable by minimizing lattice thermal conductivity, which not only demonstrates this compound as a promising thermoelectric material, but also provides a guidance for further advancements.
引用
收藏
页数:7
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