Reduced radiative currents from GaAs/InGaAs and AlGaAs/GaAs p-i-n quantum well devices

被引：0

作者：

Nelson, J ^{[1
]}

Ballard, I ^{[1
]}

Barnes, J ^{[1
]}

Ekins-Daukes, N ^{[1
]}

Barnham, KWJ ^{[1
]}

Kluftinger, BG ^{[1
]}

Tsui, ESM ^{[1
]}

Foxon, CT ^{[1
]}

Cheng, TS ^{[1
]}

Roberts, JS ^{[1
]}

机构：

[1] Univ London Imperial Coll Sci Technol & Med, Blackett Lab, Solid State Expt Grp, London SW7 2BZ, England

来源：

CONFERENCE RECORD OF THE TWENTY SIXTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1997 | 1997年

关键词：

D O I：

10.1109/PVSC.1997.654237

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Calibrated electroluminescence spectra of GaAs/InGaAs and AIGaAs/GaAs single and double quantum well (QW) p-i-n devices, at various temperatures (200-300K) and biases (0.8-1.5V), have been compared to theory to extract the quasi-fermi level separation, Delta phi(f), in the QWs and where possible in the host material. Emission from the host material for the GaAs/InGaAs cell is well fitted with Delta phi(f) = V-app at all biases and temperatures. In contrast, emission from the QW in both GaAs/InGaAs and AIGaAs/GaAs cases requires a value of Delta phi(f) which is a few tens of meV less than V-app. We attribute the variations in Delta phi(f) to irreversible thermally assisted escape from the QWs and detail some preliminary results from double QW samples.

引用

页码：919 / 922

页数：4

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