Er deposition in the submonolayer range on weakly boron-doped Si(111) surface

被引：3

作者：

Palmino, F ^{[1
]}

Pelletier, S ^{[1
]}

Ehret, E ^{[1
]}

Gautier, B ^{[1
]}

Labrune, JC ^{[1
]}

机构：

[1] Univ Franche Comte, CNRS FR 0067, Inst Microtech Franche Comte, Lab Metrol Interfaces Tech, F-25211 Montbeliard, France

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 2000年 / 18卷 / 05期

关键词：

D O I：

10.1116/1.1285934

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Erbium silicide growth on weakly boron-doped Si(111) was studied by scanning tunneling microscopy. The reactivity and the strain of this root 3 x root 3R30 degrees surface are different from those observed on Si(111) 7 X 7. These interesting features allow us to study the erbium silicide growth on a new interface. We have observed, in the submonolayer range, the formation of a metastable 2 root 3 X 2 root 3R30 degrees reconstruction and the nucleation of two kinds of stable two-dimensional ErSi2. (C) 2000 American Vacuum Society. [S0734-2101(00)00205-0].

引用

页码：2239 / 2243

页数：5

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