Magnetic field-induced metal-insulator transitions in graphite and diluted magnetic semiconductors

被引：4

作者：

Iye, Y ^{[1
]}

机构：

[1] Univ Tokyo, Inst Solid State Phys, Minato Ku, Tokyo 106, Japan

来源：

PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES | 1998年 / 356卷 / 1735期

关键词：

graphite; field-induced transition; phase transition; magnetic semiconductors; magnetoresistance;

D O I：

10.1098/rsta.1998.0155

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Two topical subjects related with the effect of magnetic field on electrical conduction and the metal-insulator transition are discussed. The first topic is an electronic phase transition in graphite, which is interpreted as a manifestation of a nesting-type instability inherent to a one-dimensional narrow Landau sub-band. The second topic is spin-dependent tranport in III-V based diluted magnetic semiconductors; in particular, a large negative magnetoresistance observed in the vicinity of metal-nonmetal transition.

引用

页码：157 / 171

页数：15

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