Ambient Processed, Water-Stable, Aqueous-Gated sub 1 V n-type Carbon Nanotube Field Effect Transistor

被引:13
|
作者
Joshi, Saumya [1 ]
Bhatt, Vijay Deep [1 ]
Jaworska, Ewa [2 ]
Michalska, Agata [2 ]
Maksymiuk, Krzysztof [2 ]
Becherer, Markus [1 ]
Gagliardi, Alessio [1 ]
Lugli, Paolo [3 ]
机构
[1] Tech Univ Munich, Dept Elect & Comp Engn, D-80333 Munich, Germany
[2] Univ Warsaw, Fac Chem, PL-02093 Warsaw, Poland
[3] Free Univ Bozen Bolzano, Fac Sci & Technol, I-39100 Bolzano, Italy
来源
SCIENTIFIC REPORTS | 2018年 / 8卷
关键词
MEMBRANE; VOLTAGE;
D O I
10.1038/s41598-018-29882-w
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
In this paper we report for the first time an n-type carbon nanotube field effect transistor which is airand water-stable, a necessary requirement for electrolyte gated CMOS circuit operation. The device is obtained through a simple process, where the native p-type transistor is converted to an n-type. This conversion is achieved by applying a tailor composed lipophilic membrane containing ion exchanger on the active channel area of the transistor. To demonstrate the use of this transistor in sensing applications, a pH sensor is fabricated. An electrolyte gated CMOS inverter using the herein proposed novel n-type transistor and a classical p-type transistor is demonstrated.
引用
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页数:8
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