Enhanced current efficiency in organic light-emitting devices using 4,4'-N,N'-dicarbazole-biphenyl as hole-buffer layer

被引：6
|
作者：
Yang, Huishan
Me, Wenfa
Zhao, Yi
Hou, Jingying
Liu, Shiyong [1 ]
机构：
[1] Jilin Univ, Natl Lab Integrated Optoelect, Changchun 130012, Peoples R China
[2] Quanzhou Normal Univ, Dept Phys, Quanzhou 362000, Peoples R China
来源：
SOLID-STATE ELECTRONICS | 2007年 / 51卷 / 01期
基金：
中国国家自然科学基金;
关键词：
organic light-emitting devices; hole-buffer layer; current efficiency;
D O I：
10.1016/j.sse.2006.11.007
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Organic light-emitting devices with a hole-buffer layer (HBL) 4,4'-N,N'-dicarbazole-biphenyl (CBP) inserted between ITO anode and hole transporting layer were fabricated. The present of the CBP can balance the hole and electron injections and reduce the hole-leakage to the cathode resulting in the enhancement of the current efficiency. The highest current efficiency of the device with optimum CBP thickness of 4 nm was 5.66 cd/A at 8 V that is nearly 1.5 times than that of the device without the HBL. (c) 2006 Elsevier Ltd. All rights reserved.
引用
收藏
页码：111 / 114
页数：4
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