The Bottom-up Growth of Edge Specific Graphene Nanoribbons

被引：19
|
作者：
Nevius, M. S. [1 ]
Wang, F. [1 ]
Mathieu, C. [2 ]
Barrett, N. [2 ]
Sala, A. [3 ]
Mentes, T. O. [3 ]
Locatelli, A. [3 ]
Conrad, E. H. [1 ]
机构：
[1] Georgia Inst Technol, Atlanta, GA 30332 USA
[2] CEA, IRAMIS SPEC LENSIS, F-91191 Gif Sur Yvette, France
[3] Elettra Sincrotrone Trieste SCpA, Trieste, Italy
来源：
NANO LETTERS | 2014年 / 14卷 / 11期
基金：
美国国家科学基金会;
关键词：
Graphene; graphite; SiC; silicon carbide; graphite thin film; nanoribbons; EPITAXIAL GRAPHENE; SPELEEM;
D O I：
10.1021/nl502942z
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
The discovery of ballistic transport in graphene grown on SiC(0001) sidewall trenches has sparked an intense effort to uncover the origin of this exceptional conductivity. How a ribbons edge termination, width, and topography influence its transport is not yet understood. This work presents the first structural and electronic comparison of sidewall graphene grown with different edge terminations. We show that armchair and zigzag terminated ribbons, grown from SiC, have very different topographies and interact differently with the substrate, properties that are critical to device architecture in sidewall ribbon electronics.
引用
收藏
页码：6080 / 6086
页数：7
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