Texture etched Al-doped ZnO: A new material for enhanced light trapping in thin film solar cells

被引：25

作者：

Kluth, O ^{[1
]}

Loffl, A ^{[1
]}

Wieder, S ^{[1
]}

Beneking, C ^{[1
]}

Appenzeller, W ^{[1
]}

Houben, L ^{[1
]}

Rech, B ^{[1
]}

Wagner, H ^{[1
]}

Hoffmann, S ^{[1
]}

Waser, R ^{[1
]}

Selvan, JAA ^{[1
]}

Keppner, H ^{[1
]}

机构：

[1] Forschungszentrum Julich, ISI, PV, D-52425 Julich, Germany

来源：

CONFERENCE RECORD OF THE TWENTY SIXTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1997 | 1997年

关键词：

D O I：

10.1109/PVSC.1997.654189

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

We found that sputtered ZnO:Al films with an appropriate compact structure develop a surface texture during etching in diluted HCl with excellent optical and light trapping properties. Moreover, these texturable films have a high optical transmission and good electrical properties which are not affected by the etching process. An analysis of the film structure by HRSEM is presented. High short-circuit currents have been achieved for a-Si-H solar cells incorporating these films as TCO substrates.

引用

页码：715 / 718

页数：4

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