One-dimensional boron nanostructures: Prediction, synthesis, characterizations, and applications

被引:70
|
作者
Tian, Jifa [1 ]
Xu, Zhichuan [1 ]
Shen, Chengmin [1 ]
Liu, Fei [2 ]
Xu, Ningsheng [2 ]
Gao, Hong-Jun [1 ]
机构
[1] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100080, Peoples R China
[2] Sun Yat Sen Univ, Sch Phys & Engn, Guangzhou 510275, Guangdong, Peoples R China
基金
中国国家自然科学基金;
关键词
FIELD-EFFECT TRANSISTOR; CARBON NANOTUBES; ELECTRICAL-TRANSPORT; OXIDE NANOWIRES; LASER-ABLATION; AB-INITIO; EMISSION; GROWTH; ARRAYS; NANORIBBONS;
D O I
10.1039/c0nr00051e
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
One-dimensional (1D) boron nanostructures are very potential for nanoscale electronic devices since their physical properties including electric transport and field emission have been found very promising as compared to other well-developed 1D nanomaterials. In this article, we review the current progress that has been made on 1D boron nanostructures in terms of theoretical prediction, synthetic techniques, characterizations and potential applications. To date, the synthesis of 1D boron nanostructures has been well-developed. The popular structures include nanowires, nanobelts, and nanocones. Some of these 1D nanostructures exhibited improved electric transport properties over bulk boron materials as well as promising field emission properties. By current experimental findings, 1D boron nanostructures are promising to be one of core materials for future nanodevices. More efforts are expected to be made in future on the controlled growth of 1D boron nanostructures and tailoring their physical properties.
引用
收藏
页码:1375 / 1389
页数:15
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