Investigation on the electrical properties of amorphous Indium-Zinc-Titanium-Aluminum Oxide thin film transistors

We fabricated bottom-gate thin film transistors (TFTs) with Indium-Zinc-Titanium-Aluminum Oxide (IZTiAO) active layer by radio frequency (RF) magnetron sputtering at room temperature. The structural characteristic of the IZTiAO film was investigated by X-ray diffraction (XRD). The IZTiAO TFTs fabricated under optimal conditions exhibit excellent performance with a saturation mobility (mu(sat)) of 32.1 cm(2)/V.s, an on/off current ratio (I-on/off) of 8 x 10(8), an off current (I-off) of 5 x 10(-13)A, a low subthreshold swing(SS) of 0.23 V/dec and a threshold voltage (V-th) of 1.2 V, respectively. The shifts of the V-th of IZTiAO TFT under positive bias stress and negative bias stress were investigated.