Deposition of amorphous C-N thin films by pulsed laser deposition under nitrogen radical beam irradiation

Amorphous carbon nitride (CNx) thin films were deposited by pulsed laser deposition (PLD) which combined with nitrogen radical beam source. The deposited films were characterized by SEM, XPS, FT-IR, and Raman scattering. The maximum N/C atomic ratio in the deposited film was 0.23 - 0.25 in this experimental condition range. N Is electron spectra of the deposited films deconvolved into two main peaks; one located at similar to 398 eV (P-1) and another at similar to 400 eV (P-2). The P-1/P-2 area ratio increased with increasing N content in the film. FT-IR and Raman spectra indicated that N=C (N-spC) bonds in the films were few. Heat-treatment of the film caused growing of graphitic domains in the film.