Oxidation of Copper for Copper Oxide Nanowires Production

被引：0
|
作者：
Lockman, Z. [1 ]
Nee, N. S. [1 ]
Astraniwata, R. [1 ]
机构：
[1] Univ Sains Malaysia, Sch Mat & Mineral Resources Engn, Nibong Tebal 14300, Penang, Malaysia
来源：
INTERNATIONAL CONFERENCE ON ADVANCEMENT OF MATERIALS AND NANOTECHNOLOGY 2007 | 2010年 / 1217卷
关键词：
CuO nanowires; Oxidation; CUO;
D O I：
10.1063/1.3377884
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Oxidations of 99.99% Cu plates were carried out at various times and temperatures in an effort to study the morphology of the oxides at various oxidation temperatures. Growth of oxides was found to be a function of temperature. Grain boundary growth dominates low temperature oxidation whereas at intermediate to high temperature, oxide thickens by bulk diffusion. Surface oxides were studied by field emission scanning electron microscope and it was found that at 400 degrees C, the surface layer of the oxide formed nanowires. The nanowires were characterized as CuO with diameter 40-50nm. The length of the tubes was estimated to be around 3 mu m with the longest reaching 5 mu m.
引用
收藏
页码：535 / 538
页数：4
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