Polarization properties of InAs/InGaAsP/InP quantum dot stacks

被引：8
|
作者：
Roy-Guay, D. [1 ]
Poole, P. J. [1 ]
Raymond, S. [1 ]
机构：
[1] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2010年 / 25卷 / 04期
关键词：
MODE-LOCKED LASER; PULSE GENERATION; ANISOTROPY; AMPLIFIERS; GROWTH; SIZE;
D O I：
10.1088/0268-1242/25/4/045001
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Surface and edge emission polarization properties of samples containing four InAs/InGaAsP/InP quantum dot layers with a stacking period from 30 nm down to 5.1 nm are investigated. Closely stacked layers show decreasing (constant) edge emission degree of polarization for emission perpendicular to the short dot (long dot) axis. Increase of the surface emission degree of polarization with decreasing period suggests an elongation of the wavefunction as dot period decreases. Use of a miscut substrate eliminates this surface emission polarization dependence, which could lead to edge polarization-independent applications.
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页数：4
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