Statistical modeling of electrochemical metallization memory cells

被引：0

作者：

Menzel, S. ^{[1
]}

Valov, I. ^{[1
]}

Waser, R. ^{[1
]}

Wolf, B. ^{[2
,3
]}

Tappertzhofen, S. ^{[2
,3
]}

Boettger, U. ^{[2
,3
]}

机构：

[1] Forschungszentrum Julich, Peter Grunberg Inst PGI 7, D-52425 Julich, Germany

[2] Rhein Westfal TH Aachen, Inst Mat Elect Engn & Informat Technol II IWE2, Aachen, Germany

[3] JARA FIT, Aachen, Germany

来源：

2014 IEEE 6TH INTERNATIONAL MEMORY WORKSHOP (IMW) | 2014年

关键词：

resistive switching memory (ReRAM); quantized conduction; electrochemical metallization cells; ECM; RESISTIVE SWITCHING MEMORIES; SYSTEMS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Redox-based resistive switching devices have attracted great interest for future nonvolatile memory application. The electrochemical metallization memory (ECM) cell is one variant of these devices. One issue is the variability of the resistive switching in ECM cells. Thus, statistical models that capture the variability of ECM cells are required to enable circuit design. This works presents a statistical model for the resistive switching in ECM cells that is based on the electrochemical driven growth and dissolution of a metallic filament. The simulation results are validated using experimental data.

引用

页数：4

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