共 4 条
A high density FinFET one-time programmable cell with new intra-fin cell isolation for advanced system on chip applications
被引:1
|作者:
Chen, Yu-Zheng
[1
]
Yuan, Jo En
[1
]
Peng, Ping Chun
[1
]
Hsiao, Woan Yun
[1
]
King, Ya-Chin
[1
]
Lin, Chrong Jung
[1
]
机构:
[1] Natl Tsing Hua Univ, Inst Elect Engn, Microelect Lab, Hsinchu 300, Taiwan
关键词:
FUSE;
ANTIFUSE;
MEMORY;
BREAKDOWN;
CONTACT;
D O I:
10.7567/JJAP.55.04EE06
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
A fully CMOS compatible one-time programmable (OTP) cell with a novel intra-fin cell isolation (IFCI) structure on a FinFET CMOS process has been proposed. The IFCI OTP cell utilizes the field-enhanced dielectric breakdown at fin corners to perform a fast and low-voltage program operation. Moreover, an ultrasmall intra-fin cell-to-cell isolation is firstly introduced to markedly shrink the cell size by eliminating the area-consuming spacing of fin-to-fin isolation. The IFCI FinFET OTP with fast program speed, excellent read disturb immunity, and reliable data retention is a promising solution for logic nonvolatile memory (NVM) technology in advanced CMOS nodes. (C) 2016 The Japan Society of Applied Physics
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