Be diffusion behavior in InGaAs, InGaAsP and InGaAs/InGaAsP GSMBE structures

被引：9
|
作者：
Koumetz, S
Dubois, C
机构：
[1] UMR CNRS 6634, GPM, F-76800 St Etienne, France
[2] Inst Natl Sci Appl, LPM, F-69621 Villeurbanne, France
来源：
JOURNAL OF CRYSTAL GROWTH | 2003年 / 252卷 / 1-3期
关键词：
diffusion; gas source molecular beam epitaxy; Be; InGaAs; InGaAsP;
D O I：
10.1016/S0022-0248(02)02483-1
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Results on Be diffusion during post-growth rapid thermal annealing at 750degreesC and 850degreesC in InGaAs, InGaAsP homostructures and InGaAs/InGaAsP heterostructures, grown by gas source molecular beam epitaxy, are reported. Profiles calculated with the kick-out model can be fitted to experimental secondary ion mass spectrometry profiles assuming Be to diffuse as neutral interstitial species. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：14 / 18
页数：5
相关论文
共 50 条
  • [1] InGaAs/InGaAsP microdisk lasers grown by GSMBE
    Wu, GZ
    Wang, XH
    Zheng, Q
    Ren, DC
    Zhang, XD
    JOURNAL OF CRYSTAL GROWTH, 2001, 227 : 343 - 345
  • [2] Be diffusion in InGaAs, InGaAsP epitaxial layers and across InGaAs/InGaAsP, InGaAs/InP heterointerfaces
    Koumetz, S
    Marcon, J
    Gautier, S
    Ketata, K
    Ketata, M
    Dubois, C
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 66 (1-3): : 55 - 57
  • [3] Be diffusion in InGaAs, InGaAsP epitaxial layers and across InGaAs/InGaAsP, InGaAs/InP heterointerfaces
    Koumetz, S.
    Marcon, J.
    Gautier, S.
    Ketata, K.
    Ketata, M.
    Dubois, C.
    Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 1999, 66 (01): : 55 - 57
  • [4] Growth and characterization of GSMBE grown strained InGaAs/InGaAsP structures for MQW lasers at 2.0 mu m
    Chen, JX
    Li, AZ
    Liu, B
    Fang, ZJ
    Ren, YC
    1997 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS, 1997, : 340 - 343
  • [5] GSMBE-grown InGaAs/InGaAsP strained quantum well lasers at 1.84 micron wavelength
    Bai, J.S.
    Fang, Z.J.
    Zhang, Y.M.
    Chen, G.T.
    Li, A.Z.
    Chen, J.X.
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 2001, 22 (02): : 126 - 129
  • [6] Intermixing behavior in InGaAs/InGaAsP multiple quantum wells with dielectric and InGaAs capping layers
    Lee, MK
    Song, JD
    Yu, JS
    Kim, TW
    Lim, H
    Lee, YT
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2001, 73 (03): : 357 - 360
  • [7] Beryllium diffusion in InGaAs/InGaAsP structures grown by gas source molecular beam epitaxy
    Koumetz, S
    Valet, O
    Marcon, J
    Ketata, K
    Ketata, M
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 71 : 171 - 174
  • [8] Intermixing behavior in InGaAs/InGaAsP multiple quantum wells with dielectric and InGaAs capping layers
    M.K. Lee
    J.D. Song
    J.S. Yu
    T.W. Kim
    H. Lim
    Y.T. Lee
    Applied Physics A, 2001, 73 : 357 - 360
  • [9] InGaAsP/InGaAs tandem TPV device
    Siergiej, RR
    Sinharoy, S
    Valko, T
    Wehrer, RJ
    Wernsman, B
    Link, SD
    Schultz, RW
    Messham, RL
    THERMOPHOTOVOLTAIC GENERATION OF ELECTRICITY, 2004, 738 : 480 - 488
  • [10] Photomodulated reflectance of tensilely strained InGaAs/InGaAsP quantum well structures
    Hosea, TJC
    Rowland, G
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1998, 13 (02) : 207 - 213
12345