Accurate characterization of silicon-on-insulator MOSFETs for the design of low-voltage, low-power RF integrated circuits

被引：5
|
作者：
Raskin, JP [1 ]
Gilon, R
Dambrine, G
Chen, J
Vanhoenacker, D
Colinge, JP
机构：
[1] Univ Michigan, Radiat Lab, Ann Arbor, MI 48109 USA
[2] Alcatel Microelect, Oudenaande, Belgium
[3] Inst Electron & Microelectron Nord, Villeneuve Dascq, France
[4] Motorola Inc, Austin, TX USA
[5] Univ Catholique Louvain, Lab Hyperfrequences, B-1348 Louvain, Belgium
[6] Univ Calif Davis, Dept Elect & Comp Engn, Davis, CA 95616 USA
来源：
ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING | 2000年 / 25卷 / 02期
关键词：
integrated circuit measurements; microwave measurements; MOSFETs; scattering parameters measurements; silicon-on-insulator technology;
D O I：
10.1023/A:1008380615900
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
The maturation of low cost Silicon-on-Insulator (SOI) MOSFET technology in the microwave domain has brought about a need to develop specific characterization techniques. An original scheme is presented, which, by combining careful design of probing and calibration structures, rigorous in-situ calibration, and a new powerful direct extraction method, allows reliable identification of the parameters of the non-quasi-static small-signal model and the high-frequency noise parameters for MOSFETs. The extracted model is shown to be valid up to 40 GHz.
引用
收藏
页码：133 / 155
页数：23
相关论文
共 50 条
  • [1] Accurate Characterization of Silicon-On-Insulator MOSFETs for the Design of Low-Voltage, Low-Power RF Integrated Circuits
    J.-P. Raskin
    R. Gilon
    G. Dambrine
    J. Chen
    D. Vanhoenacker
    J.-P. Colinge
    Analog Integrated Circuits and Signal Processing, 2000, 25 : 133 - 155
  • [2] Channel design of silicon-on-insulator (SOI) MOSFET for low-voltage low-power application
    Yang, B
    Huang, R
    Zhang, X
    Wang, YY
    1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS, 1998, : 734 - 737
  • [3] Low-power, low-voltage integrated circuits: Technology and design - Preface
    Boussey, J
    Cristoloveanu, S
    MICROELECTRONIC ENGINEERING, 1997, 39 (1-4) : R7 - R8
  • [4] DESIGN PRINCIPLES FOR LOW-VOLTAGE LOW-POWER ANALOG INTEGRATED-CIRCUITS
    SERDIJN, WA
    VANDERWOERD, AC
    VANROERMUND, AHM
    DAVIDSE, J
    ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING, 1995, 8 (01) : 115 - 120
  • [5] A low-voltage design technique for RF integrated circuits
    Manku, T
    Beck, G
    Shin, EJ
    IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 1998, 45 (10) : 1408 - 1413
  • [6] Low-voltage, low-power basic circuits
    Baschirotto, A
    D'Amico, S
    Malcovati, P
    ANALOG CIRCUIT DESIGN: RF CIRCUITS: WIDE BAND, FRONT-ENDS,DAC'S, DESIGN METHODOLOGY AND VERIFICATION FOR RF AND MIXED-SIGNAL SYSTEMS, LOW POWER AND LOW VOLTAGE, 2006, : 295 - +
  • [7] High Temperature RF Behavior of SOI MOSFETs for Low-Power Low-Voltage Applications
    Emam, M.
    Vanhoenacker-Janvier, D.
    Anil, K.
    Ida, J.
    Raskin, J. -P.
    2008 IEEE INTERNATIONAL SOI CONFERENCE, PROCEEDINGS, 2008, : 139 - +
  • [8] Low-voltage low-power CMOS-RF transceiver design
    Steyaert, MSJ
    De Muer, B
    Leroux, P
    Borremans, M
    Mertens, K
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2002, 50 (01) : 281 - 287
  • [9] SPECIAL ISSUE ON LOW-VOLTAGE, LOW-POWER INTEGRATED-CIRCUITS - FOREWORD
    SHIMOHIGASHI, K
    IEICE TRANSACTIONS ON ELECTRONICS, 1995, E78C (04) : 333 - 333
  • [10] A low-voltage low-power voltage reference based on subthreshold MOSFETs
    Giustolisi, G
    Palumbo, G
    Criscione, M
    Cutrì, F
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2003, 38 (01) : 151 - 154
12345