Probing ultrafast dynamics of photo-excited Bismuth nanostructure

被引：0
|
作者：
Sharma, Chhavi [1 ,2 ]
Kumar, Mahesh [1 ,2 ]
机构：
[1] CSIR, Natl Phys Lab, Adv Mat & Devices Div, Dr KS Krishnan Marg, New Delhi, India
[2] CSIR, Acad Sci & Innovat Res, Human Resource Dev Ctr, Ghaziabad 201002, Uttar Pradesh, India
来源：
2019 URSI ASIA-PACIFIC RADIO SCIENCE CONFERENCE (AP-RASC) | 2019年
关键词：
TRANSITIONS;
D O I：
10.23919/ursiap-rasc.2019.8738275
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The present work shows the primarily results of ultrafast dynamics of photo-excited Bismuth (Bi) nanostructure through Femtosecond optical pump-probe spectroscopy technique. The study is an attempt to explore distinctive features of Bi nanostructure manifested due to its unusual electronic properties. The results reveal Bismuth charge carrier dynamics in terms of positive Delta A/A signal in visible-NIR region due to photo-excitation of Bi nanostructure by ultrafast pulses. The positive signal is attributed to excited state absorption arises due to various reasons like surface plasmons and phonons in visible region and interband plasmonic resonances in NIR region. The observed features of ultrafast dynamics reflect potential of Bi for applications of solar energy harversting.
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页数：4
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