Enhanced radiative efficiency in GaN quantum dots grown by molecular beam epitaxy

被引：10
|
作者：
Neogi, A [1 ]
Everitt, H
Morkoç, H
Kuroda, T
Tackeuchi, A
机构：
[1] Duke Univ, Dept Phys, Durham, NC 27708 USA
[2] Virginia Commonwealth Univ, Dept Elect Engn, Richmond, VA 23284 USA
[3] Waseda Univ, Dept Appl Phys, Shinjuku Ku, Tokyo 1698555, Japan
来源：
IEEE TRANSACTIONS ON NANOTECHNOLOGY | 2003年 / 2卷 / 01期
关键词：
GaN; molecular-beam epitaxy; quantum dots; semiconductor nanostructures; time-resolved photoluminescence;
D O I：
10.1109/TNANO.2003.808513
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Self-assembled GaN quantum dots (QDs), grown on AIN by molecular beam epitaxy, were investigated by time-resolved photoluminescence spectroscopy. We investigate the emission mechanism in GaN QDs by comparing the carrier recombination dynamics in single and multiple period QDs. At 100 K, the PL decay time in single period QD structures is considerably shorter than in stacked QDs: Compared to single period QDs, the room temperature PL efficiency is considerably enhanced in 20 period QDs due to the reduction in nonradiative recombination processes.
引用
收藏
页码：10 / 14
页数：5
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