A Repeatable Epitaxial Lift-Off Process from a Single GaAs Substrate for Low-Cost and High-Efficiency III-V Solar Cells

被引：34

作者：

Choi, Wonjung ^{[1
]}

Kim, Chang Zoo ^{[2
]}

Kim, Chang Su ^{[3
]}

Heo, Wooseok ^{[4
]}

Joo, Taiha ^{[4
]}

Ryu, Seung Yoon ^{[5
]}

Kim, Hogyoung

Kim, Hongjoon

Kang, Ho Kwan ^{[2
]}

Jo, Sungjin ^{[1
]}

机构：

[1] Kyungpook Natl Univ, Sch Architectural Civil Environm & Energy Engn, Taegu 702701, South Korea

[2] Korea Adv Nano Fab Ctr, Nano Proc Div, Gyeonggi Do 443270, South Korea

[3] Korea Inst Mat Sci, Adv Funct Thin Films Dept, Chang Won 641831, South Korea

[4] Pohang Univ Sci & Technol, Dept Chem, Pohang 790784, South Korea

[5] Sunmoon Univ, Dept Informat Display, Chungnam 336708, South Korea

来源：

ADVANCED ENERGY MATERIALS | 2014年 / 4卷 / 16期

基金：

新加坡国家研究基金会;

关键词：

ENHANCED DEFECT REACTIONS; GALLIUM-ARSENIDE; SI; DIFFUSION; JUNCTION; GROWTH; ZINC; PHOTOVOLTAICS; LAYERS; REUSE;

D O I：

10.1002/aenm.201400589

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The effects of epitaxial materials and solar cell design on the performance of solar cells grown by the multilayer approach are investigated. The novel solar cell structure with a p-on-n type configuration suggested exhibits improved uniformity in the photovoltaic performance because of the suppression of Zn diffusion. This approach provides routes to achieve further improvements and acts as a guideline for the commercialization of the multilayer technique. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页数：6

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