A High-Efficiency Class-F GaN HEMT Power Amplifier with a Diode Predistortion Linearizer

被引：0
|
作者：
Ando, Akhiro [1 ]
Takayama, Yoichiro [1 ]
Yoshida, Tsuyoshi [1 ]
Ishikawa, Ryo [1 ]
Honjo, Kazuhiko [1 ]
机构：
[1] Univ Electrocommun, Tokyo 1828585, Japan
来源：
APMC: 2008 ASIA PACIFIC MICROWAVE CONFERENCE (APMC 2008), VOLS 1-5 | 2008年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：815 / 818
页数：4
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