Ambipolar Charge Transport in Isoindigo-Based Donor-Acceptor Polymers

被引:79
|
作者
Stalder, Romain [1 ]
Puniredd, Sreenivasa Reddy [2 ,8 ]
Hansen, Michael Ryan [3 ,4 ,5 ]
Koldemir, Unsal [1 ]
Grand, Caroline [6 ]
Zajaczkowski, Wojciech [2 ]
Muellen, Klaus [2 ]
Pisula, Wojciech [2 ,7 ]
Reynolds, John R. [1 ,6 ]
机构
[1] Univ Florida, Dept Chem, George & Josephine Butler Polymer Res Lab, Gainesville, FL 32611 USA
[2] Max Planck Inst Polymer Res, Ackermannweg 10, D-55128 Mainz, Germany
[3] Aarhus Univ, Interdisciplinary Nanosci Ctr iNANO, Gustav Wieds Vej 14, DK-8000 Aarhus C, Denmark
[4] Aarhus Univ, Dept Chem, Gustav Wieds Vej 14, DK-8000 Aarhus C, Denmark
[5] Univ Munster, Inst Phys Chem, Corrensstr 28-30, D-48149 Munster, Germany
[6] Georgia Inst Technol, Ctr Organ Photon & Elect, Sch Mat Sci & Engn, Sch Chem & Biochem, Atlanta, GA 30332 USA
[7] Lodz Univ Technol, Dept Mol Phys, Zeromskiego 116, PL-90924 Lodz, Poland
[8] ASTAR, IMRE, 2 Fusionopolis Way, Singapore 138634, Singapore
关键词
FIELD-EFFECT TRANSISTORS; THIN-FILM TRANSISTORS; HETEROJUNCTION SOLAR-CELLS; HIGH-ELECTRON-MOBILITY; MULTIPLE-QUANTUM NMR; SOLID-STATE NMR; N-TYPE POLYMER; CONJUGATED POLYMERS; ORGANIC SEMICONDUCTORS; HOLE MOBILITIES;
D O I
10.1021/acs.chemmater.5b03968
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
A series of donor-acceptor isoindigo (iI)-based copolymers synthesized with increasing numbers of thiophene rings in the repeat unit (from zero to three thiophene rings, including silole and germole-bridged fused bithiophene units) is applied toward solution processed OFET devices. Differential pulse voltammetry on thin films of the polymers recorded LUMO energy levels confined within a 0.1 eV range around 3.9 eV, while their bandgaps are estimated at 1.5 to 1.7 eV. The interchain pi-stacking distance of each sample was evaluated from the 2D-WAXS diffraction patterns of annealed extruded filaments and the GIWAXS patterns of thin films, and were found to be all in the same range, between 3.65 and 3.75 A for the thin films. Both p-type and n-type charge transport in thin film bottom gate, bottom contact transistor devices were recorded. In particular, the copolymer P(T-iI) containing one thiophene ring afforded wellbalanced ambipolar p-type and n-type mobilities of 0.04 cm(2)/(V s) and 0.1 cm(2)/(V s), respectively. Under our processing conditions, the charge transport properties evolved from exclusively n-type to solely p-type as the number of thiophene rings within the repeat unit is increased to three rings in the case of P(T3-iI). This was observed despite all polymers displaying similar LUMO energy levels, interchain pi-stacking distances, and microscopic thin film morphology (all face-on arrangement on the dielectric surface). This prompted a molecular-scale morphological analysis of P(T-iI) and P(T3-iI) in particular, using solid-state NMR spectroscopy in order to further investigate the stark difference in n-type mobilities between these two polymers. Using the complete assignment of solution 2D-NMR spectra of a thiophene-il-thiophene model compound as guideline, the analysis of proton carbon correlations in the solid-state 2D C-13{H-1} FSLG-HETCOR NMR spectra of P(T-iI) and P(T3-iI) revealed differences in the molecular environment surrounding each iI unit. The latter suggests a stronger correlation of neighboring it units in P(T-iI), whereas a stronger intermixing of iI and thiophenes prevails in P(T3-iI). We conclude that, in this study, the choice of the donor unit length within the primary structure of the D-A polymer can be responsible for hindering its n-type character.
引用
收藏
页码:1286 / 1297
页数:12
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