Growth and characterization of MgS/CdSe self-assembled quantum dots

被引：23
|
作者：
Bradford, C
Urbaszek, B
Funato, M
Graham, TCM
McGhee, EJ
Warburton, RJ
Prior, KA
Cavenett, B
机构：
[1] Heriot Watt Univ, Sch Engn & Phys Sci, Edinburgh EH14 4AS, Midlothian, Scotland
[2] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6068501, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 2003年 / 251卷 / 1-4期
关键词：
atomic force microscopy; nanostructures; molecular beam epitaxy; semiconducting II-VT materials;
D O I：
10.1016/S0022-0248(02)02309-6
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
CdSe/MgS quantum dots have been grown successfully by molecular beam epitaxy using a thermally activated reorganization process that occurs during growth interruption. PL measurements show emission from both QDs and the wetting layer, with emission energies ranging between (2.3 and 3.8 eV). AFM topography and mu-PL measurements also show evidence of quantum dot structures. Power dependent PL measurements carried out on the dots give a value of 30 meV for the bi-exciton binding energy at 77 K. This value is larger than both the CdSe bulk LO phonon energy and the thermal energy at 300 K All rights reserved (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：581 / 585
页数：5
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