Mix-and-Match Considerations for EUV Insertion in N7 HVM

被引：2
|
作者：
Chen, Xuemei [1 ]
Gabor, Allen [1 ]
Samudrala, Pavan [1 ]
Meyers, Sheldon [1 ]
Hosler, Erik [1 ]
Johnson, Richard [2 ]
Felix, Nelson [2 ]
机构：
[1] GLOBALFOUNDRIES, 400 Stone Break Rd Extens, Malta, NY 12020 USA
[2] IBM Res, 257 Fuller Rd, Albany, NY 12203 USA
来源：
EXTREME ULTRAVIOLET (EUV) LITHOGRAPHY VIII | 2017年 / 10143卷
关键词：
N7; EUV; Cross-Platform Mix and Match Overlay Control; Higher-Order Intra-field Scanner Correction; High-Order Wafer-to-Wafer Correction; Intra-field Sample Plan Optimization;
D O I：
10.1117/12.2258674
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
An optimal mix-match control strategy for EUV and 193i scanners is crucial for the insertion of EUV lithography at 7nm technology node. The systematic differences between these exposure systems introduce additional cross-platform mixmatch overlay errors. In this paper, we quantify the EUV specific contributions to mix-match overlay, and explore the effectiveness of higher-order interfield and intrafield corrections on minimizing the on-product mix-match overlay errors. We also analyze the impact of intra-field sampling plans in terms of model accuracy and adequacy in capturing EUV specific intra-field signatures. Our analysis suggests that more intra-field measurements and appropriate placement of the metrology targets within the field are required to achieve the on-product overlay control goals for N7 HVM.
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页数：10
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