Temperature dependence of depinning fields in submicron magnetic wires with an artificial neck

被引:38
|
作者
Himeno, A [1 ]
Okuno, T
Ono, T
Mibu, K
Nasu, S
Shinjo, T
机构
[1] Kyoto Univ, Inst Chem Res, Kyoto 6110011, Japan
[2] Kyoto Univ, Res Ctr Low Temp & Mat Sci, Kyoto 6110011, Japan
[3] Osaka Univ, Grad Sch Engn Sci, Toyonaka, Osaka 5608531, Japan
[4] Inst Inst Adv Studies, Kyoto 6190225, Japan
关键词
magnetization reversal; submicron magnetic wire; magnetic domain wall; giant magnetoresistance;
D O I
10.1016/j.jmmm.2004.09.023
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Magnetization reversal in a submicron magnetic wire with an artificial neck consisting of a magnetic/nonmagnetic/ magnetic trilayered structure was investigated by utilizing the giant magnetoresistance effect. A magnetic domain wall was pinned by the artificial neck introduced into the wire, which indicates that the neck works as a pinning center of the domain wall. The temperature dependence of the depinning field between 4.2 and 300 K was described well by a theoretical model based on thermally assisted magnetization reversal over a single potential barrier. The magnitude of the potential barrier of the artificial neck was estimated. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:167 / 170
页数:4
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