AC and DC characteristics of carbon nanotube field-effect transistors

被引：0
|
作者：
Appenzeller, J [1 ]
机构：
[1] IBM Corp, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA
来源：
PROCEEDING OF THE 2004 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING | 2004年
关键词：
D O I：
10.1109/BIPOL.2004.1365777
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Recent results on the dc as well as ac characteristics of carbon nanotube field-effect transistors (CN-FETs) will be presented. Experimental data will be discussed in the context of an extended Schottky barrier model and the potential of CNFETs for high frequency applications will be elucidated.
引用
收藏
页码：192 / 193
页数：2
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