Morphologies of GaN one-dimensional materials

被引：57
|
作者：
Li, JY [1 ]
Qiao, ZY
Chen, XL
Cao, YG
Lan, YC
Wang, CY
机构：
[1] Univ Sci & Technol Beijing, Dept Phys Chem, Beijing 100083, Peoples R China
[2] Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2000年 / 71卷 / 05期
关键词：
D O I：
10.1007/s003390000684
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
GaN one-dimensional materials with different morphologies were formed on LaAlO3 crystal, silicon crystal and quartz glass substrates through a simple sublimation method. They were characterized by powder X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM) and energy-dispersive X-ray (EDX) spectroscopy. FE-SEM images showed that the morphologies of the one-dimensional materials included straight nanorods, curved nanowires, nanoribbons, zigzag nanorods and beaded or capture-tree nanorods. XRD and EDX studies indicated that all the one-dimensional materials were wurtzite GaN.
引用
收藏
页码：587 / 588
页数：2
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